Invention Grant
- Patent Title: Heterolithic microwave integrated circuits including gallium-nitride devices on intrinsic semiconductor
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Application No.: US15875406Application Date: 2018-01-19
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Publication No.: US11056483B2Publication Date: 2021-07-06
- Inventor: Timothy E. Boles , Wayne Mack Struble
- Applicant: MACOM Technology Solutions Holdings, Inc.
- Applicant Address: US MA Lowell
- Assignee: MACOM Technology Solutions Holdings, Inc.
- Current Assignee: MACOM Technology Solutions Holdings, Inc.
- Current Assignee Address: US MA Lowell
- Agency: Thomas | Horstemeyer, LLP.
- Agent Jason M. Perilla
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L21/762 ; H01L27/12 ; H01L21/02 ; H01L23/66
Abstract:
Apparatus and methods relating to heterolithic microwave integrated circuits HMICs are described. An HMIC can include different semiconductor devices formed from different semiconductor systems in different regions of a same substrate. An HMIC can also include bulk regions of low-loss electrically-insulating material extending through the substrate and located between the different semiconductor regions. Passive RF circuit elements can be formed on the low-loss electrically-insulating material.
Public/Granted literature
- US20190229114A1 HETEROLITHIC MICROWAVE INTEGRATED CIRCUITS INCLUDING GALLIUM-NITRIDE DEVICES ON INTRINSIC SEMICONDUCTOR Public/Granted day:2019-07-25
Information query
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