A semiconductor device having a three-dimensional structure is disclosed herein. The semiconductor device includes a substrate. a first electrode line that extends in a first direction perpendicular to the substrate, a device pattern that extends from the first electrode line in a second direction parallel to the substrate, and a second electrode line connected to the device pattern. The device pattern may comprise at least one semiconductor layer pattern, where the at least one semiconductor layer pattern comprises an n-type dopant or a p-type dopant.