Invention Grant
- Patent Title: Semiconductor device with multiple threshold voltage and method of fabricating the same
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Application No.: US16368827Application Date: 2019-03-28
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Publication No.: US11056486B2Publication Date: 2021-07-06
- Inventor: Li-Ting Wang , Teng-Chun Tsai , Cheng-Tung Lin , De-Fang Chen , Hui-Cheng Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/78 ; H01L21/8234 ; H01L21/265 ; H01L29/423 ; H01L29/66
Abstract:
A semiconductor device includes a first vertical device having a first threshold and second vertical device having a second threshold. The first vertical device includes a first source; a first channel over the first source; a first drain over the first channel; a first conductive layer adjacent to the first channel; and a first gate adjacent to the first conductive layer. The second vertical device includes a second source; a second channel over the second source; a second drain over the second channel; a second conductive layer adjacent to the second channel; and a second gate adjacent to the second conductive layer.
Public/Granted literature
- US20190229118A1 SEMICONDUCTOR DEVICE WITH MULTIPLE THRESHOLD VOLTAGE AND METHOD OF FABRICATING THE SAME Public/Granted day:2019-07-25
Information query
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