Invention Grant
- Patent Title: One selector one resistor MRAM crosspoint memory array fabrication methods
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Application No.: US16460820Application Date: 2019-07-02
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Publication No.: US11056534B2Publication Date: 2021-07-06
- Inventor: Lei Wan , Tsai-Wei Wu , Jordan A. Katine
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Addison
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Addison
- Agency: Vierra Magen Marcus LLP
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/12 ; H01L27/24 ; H01L43/10
Abstract:
A memory array is provided that includes a first memory level having a plurality of memory cells each including a corresponding magnetic memory element coupled in series with a corresponding selector element, and a plurality of vias, each of the vias coupled in series with a corresponding one of the memory cells.
Information query
IPC分类:
