Invention Grant
- Patent Title: Photoelectric conversion element and solid-state imaging device
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Application No.: US16503150Application Date: 2019-07-03
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Publication No.: US11056539B2Publication Date: 2021-07-06
- Inventor: Yuta Hasegawa , Nobuyuki Matsuzawa , Yoshiaki Obana , Ichiro Takemura , Norikazu Nakayama , Masami Shimokawa , Tetsuji Yamaguchi , Iwao Yagi , Hideaki Mogi
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Sheridan Ross P.C.
- Priority: JP2015-110900 20150529,JP2016-072197 20160331
- Main IPC: H01L27/30
- IPC: H01L27/30 ; H01L27/146 ; H01L31/10 ; H01L27/28 ; H01L51/00 ; H01L51/42

Abstract:
A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.
Public/Granted literature
- US20200006435A1 PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGING DEVICE Public/Granted day:2020-01-02
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