Invention Grant
- Patent Title: Implantation and annealing for semiconductor device
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Application No.: US16441487Application Date: 2019-06-14
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Publication No.: US11056573B2Publication Date: 2021-07-06
- Inventor: Yu-Chang Lin , Tien-Shun Chang , Szu-Ying Chen , Chun-Feng Nieh , Sen-Hong Syue , Huicheng Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/66 ; H01L27/092 ; H01L29/78 ; H01L21/8238 ; H01L21/265 ; H01L21/324
Abstract:
A semiconductor device, and a method of manufacturing, is provided. A dummy gate is formed on a semiconductor substrate. An interlayer dielectric (ILD) is formed over the semiconductor fin. A dopant is implanted into the ILD. The dummy gate is removed and an anneal is performed on the ILD. The implantation and the anneal lead to an enhancement of channel resistance by a reduction in interlayer dielectric thickness and to an enlargement of critical dimensions of a metal gate.
Information query
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