Invention Grant
- Patent Title: Small pitch super junction MOSFET structure and method
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Application No.: US16391197Application Date: 2019-04-22
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Publication No.: US11056585B2Publication Date: 2021-07-06
- Inventor: Hamza Yilmaz
- Applicant: Hamza Yilmaz
- Applicant Address: US CA Gilroy
- Assignee: Hamza Yilmaz
- Current Assignee: Hamza Yilmaz
- Current Assignee Address: US CA Gilroy
- Agent Halit N. Yakupoglu
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10 ; H01L29/06 ; H01L29/423 ; H01L29/40 ; H01L21/265 ; H01L21/02 ; H01L29/66 ; H01L29/739
Abstract:
The present invention provides semiconductor devices with super junction drift regions that are capable of blocking voltage. A super junction drift region is an epitaxial semiconductor layer located between a top electrode and a bottom electrode of the semiconductor device. The super junction drift region includes a plurality of pillars having P type conductivity, formed in the super junction drift region, which are surrounded by an N type material of the super junction drift region.
Public/Granted literature
- US20190326431A1 SMALL PITCH SUPER JUNCTION MOSFET STRUCTURE AND METHOD Public/Granted day:2019-10-24
Information query
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