Invention Grant
- Patent Title: Method of producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
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Application No.: US16348609Application Date: 2018-02-12
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Publication No.: US11056628B2Publication Date: 2021-07-06
- Inventor: Jens Ebbecke
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: DLA Piper LLP (US)
- Priority: DE102017103164.2 20170216
- International Application: PCT/EP2018/053440 WO 20180212
- International Announcement: WO2018/149788 WO 20180823
- Main IPC: H01L33/62
- IPC: H01L33/62 ; H01L25/075 ; H01L33/40 ; H01L33/00 ; H01L33/20

Abstract:
A method of manufacturing an optoelectronic semiconductor chip includes providing a growth substrate, growing a semiconductor layer sequence on the growth substrate, depositing a metallization on a side of the semiconductor layer sequence remote from the growth substrate, depositing a layer on the metallization, coupling a carrier to the layer on a side of the layer remote from the semiconductor layer sequence, separating the growth substrate from the semiconductor layer sequence, depositing an electrically conductive layer on a side of the semiconductor layer sequence facing away from the carrier, separating the carrier from the layer, thereby forming a layer stack with the metallization, the semiconductor layer sequence, the electrically conductive layer and a coupling layer including at least a part of a further material of the layer remaining on a side of the metallization remote from the semiconductor layer sequence, and coupling the layer stack to a chip carrier.
Public/Granted literature
- US20200066953A1 METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP AND OPTOELECTRONIC SEMICONDUCTOR CHIP Public/Granted day:2020-02-27
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