Invention Grant
- Patent Title: Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same
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Application No.: US16693006Application Date: 2019-11-22
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Publication No.: US11056640B2Publication Date: 2021-07-06
- Inventor: Bhagwati Prasad , Matthew Carey , Alan Kalitsov , Bruce Terris
- Applicant: WESTERN DIGITAL TECHNOLOGIES, INC.
- Applicant Address: US CA San Jose
- Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
- Current Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
- Current Assignee Address: US CA San Jose
- Agency: The Marbury Law Group PLLC
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L43/02 ; H01L43/10 ; H01F10/32 ; G11C11/16 ; H01L43/12 ; H01F41/32 ; H01L43/08
Abstract:
Magnetoelectric or magnetoresistive memory cells include at least one of a high dielectric constant dielectric capping layer and/or a nonmagnetic metal dust layer located between the free layer and the dielectric capping layer.
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