The present disclosure provides a quantum dot thin film that is formed by cross-linking ligands of quantum dots with a photo cross-linker containing two or more azide groups. According to still another aspect of the present disclosure, a method for forming a quantum dot pattern includes: forming a quantum dot layer on a substrate by coating the substrate with a solution including quantum dots and a photo cross-linker containing two or more azide groups; placing a mask having a pattern on the quantum dot layer and performing UV exposure on the quantum dot layer; and forming a quantum dot pattern by removing a non-exposed region of the quantum dot layer.