Invention Grant
- Patent Title: Flip-chip light emitting diode and manufacturing method thereof
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Application No.: US16221706Application Date: 2018-12-17
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Publication No.: US11056669B2Publication Date: 2021-07-06
- Inventor: Shu-Fan Yang , Chun-Yi Wu , Chaoyu Wu
- Applicant: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
- Applicant Address: CN Xiamen
- Assignee: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
- Current Assignee: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
- Current Assignee Address: CN Xiamen
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN201610450480.0 20160622
- Main IPC: H01L33/42
- IPC: H01L33/42 ; H01L51/52 ; H01L33/22 ; H01L33/00 ; H01L21/28 ; H01L33/10 ; H01L33/32 ; H01L33/40 ; H01L33/48

Abstract:
A method of manufacturing a flip-chip light emitting diode includes: providing a transparent substrate and a temporary substrate, and bonding the transparent substrate with the temporary substrate; grinding and thinning the transparent substrate; providing a light-emitting epitaxial laminated layer having a first surface and a second surface opposite to each other, and including a first semiconductor layer, an active layer and a second semiconductor layer; forming a transparent bonding medium layer over the first surface of the light-emitting epitaxial laminated layer, and bonding the transparent bonding medium layer with the transparent substrate; defining a first electrode region and a second electrode region over the second surface of the light-emitting epitaxial laminated layer, and manufacturing a first electrode and a second electrode; and removing the temporary substrate.
Public/Granted literature
- US20190140208A1 Flip-chip Light Emitting Diode and Manufacturing Method Thereof Public/Granted day:2019-05-09
Information query
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