Invention Grant
- Patent Title: Method of manufacturing semiconductor laser element, and semiconductor laser device thereof and gas analyzer
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Application No.: US16415757Application Date: 2019-05-17
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Publication No.: US11056853B2Publication Date: 2021-07-06
- Inventor: Makoto Matsuhama
- Applicant: HORIBA, LTD.
- Applicant Address: JP Kyoto
- Assignee: HORIBA, LTD.
- Current Assignee: HORIBA, LTD.
- Current Assignee Address: JP Kyoto
- Agency: Brooks Kushman P.C.
- Priority: JPJP2018-096588 20180518
- Main IPC: H01S5/028
- IPC: H01S5/028 ; H01S5/00 ; H01S5/02 ; G01N21/31 ; H01S5/34 ; H01S5/12 ; H01S5/22
Abstract:
In order to form a reflection film on a rear end facet of a waveguide more easily than conventional, by etching a laminated structure formed on a substrate, a plurality of waveguides segmented in a lattice shape are formed, and a reflection film is formed on a surface of each of the waveguides for reflecting light in each of the waveguides.
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