Invention Grant
- Patent Title: Bonded substrate and a manufacturing method thereof, and a surface acoustic wave device using the said bonded substrate
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Application No.: US15762139Application Date: 2016-09-13
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Publication No.: US11057014B2Publication Date: 2021-07-06
- Inventor: Masayuki Tanno , Koji Kato , Yoshinori Kuwabara
- Applicant: SHIN-ETSU CHEMICAL CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2015-189028 20150926,JPJP2016-007612 20160119
- International Application: PCT/JP2016/076924 WO 20160913
- International Announcement: WO2017/051747 WO 20170330
- Main IPC: H03H9/02
- IPC: H03H9/02 ; H03H9/25

Abstract:
An object of the present invention is to provide a bonded substrate which is excellent in temperature characteristics and suppresses unnecessary response due to reflection of an elastic wave at a bonding interface.
[Means to Solve the Problems] The present invention is unique in that a bonded substrate is constructed by bonding a LiTaO3 substrate and a base plate wherein a Li concentration at a base plate-bonding face of the LiTaO3 substrate is higher than that at a LiTaO3 substrate-side end face of the bonded substrate, that the difference between the Li concentration at the base plate-bonding face of the LiTaO3 substrate and the Li concentration at the LiTaO3 substrate-side end face of the bonded substrate is 0.1 mol % or greater, that the Li concentration at the base plate-bonding face of the LiTaO3 substrate satisfies an equation Li/(Li+Ta)×100=(50+α) mol %, where α is in the range of −1.2
[Means to Solve the Problems] The present invention is unique in that a bonded substrate is constructed by bonding a LiTaO3 substrate and a base plate wherein a Li concentration at a base plate-bonding face of the LiTaO3 substrate is higher than that at a LiTaO3 substrate-side end face of the bonded substrate, that the difference between the Li concentration at the base plate-bonding face of the LiTaO3 substrate and the Li concentration at the LiTaO3 substrate-side end face of the bonded substrate is 0.1 mol % or greater, that the Li concentration at the base plate-bonding face of the LiTaO3 substrate satisfies an equation Li/(Li+Ta)×100=(50+α) mol %, where α is in the range of −1.2
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