Invention Grant
- Patent Title: Bulk-acoustic wave resonator
-
Application No.: US15996921Application Date: 2018-06-04
-
Publication No.: US11057017B2Publication Date: 2021-07-06
- Inventor: Tae Yoon Kim , Won Han , Chang Hyun Lim
- Applicant: Samsung Electro-Mechanics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2017-0104415 20170817,KR10-2018-0012038 20180131
- Main IPC: H03H9/17
- IPC: H03H9/17 ; H03H3/02 ; H03H9/05 ; H03H9/02

Abstract:
A bulk-acoustic wave resonator includes a substrate; a lower electrode formed on the substrate, and at least a portion of the lower electrode is formed on a cavity; a piezoelectric layer formed on the lower electrode; an upper electrode formed on the piezoelectric layer; a membrane layer formed below the lower electrode and forming the cavity together with the substrate; and a protruding portion formed on the membrane layer and further formed in the cavity in a direction that extends away from the membrane layer.
Public/Granted literature
- US20190058455A1 BULK-ACOUSTIC WAVE RESONATOR Public/Granted day:2019-02-21
Information query
IPC分类: