Invention Grant
- Patent Title: Anti-overexposure circuit structure and electronic device using the same
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Application No.: US16700468Application Date: 2019-12-02
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Publication No.: US11057579B2Publication Date: 2021-07-06
- Inventor: Shou-Te Wei , Wei-Chih Chen
- Applicant: LITE-ON ELECTRONICS (GUANGZHOU) LIMITED , LITE-ON TECHNOLOGY CORPORATION
- Applicant Address: CN Guangzhou; TW Taipei
- Assignee: LITE-ON ELECTRONICS (GUANGZHOU) LIMITED,LITE-ON TECHNOLOGY CORPORATION
- Current Assignee: LITE-ON ELECTRONICS (GUANGZHOU) LIMITED,LITE-ON TECHNOLOGY CORPORATION
- Current Assignee Address: CN Guangzhou; TW Taipei
- Agency: Innovation Counsel LLP
- Priority: CN201910341808.9 20190425
- Main IPC: H04N5/351
- IPC: H04N5/351 ; H04N5/3745 ; H03K19/20 ; H03K5/24

Abstract:
An anti-overexposure circuit structure and an electronic device using the same are provided. An anti-overexposure circuit structure includes a first capacitor, a second capacitor, a photo diode, a first switch and a control circuit. The photo diode is coupled to the first capacitor and the second capacitor. The first switch is serially connected to the photo diode. The control circuit is coupled to the first switch and configured to: control the first switch to be turned off when SOC of the first capacitor or SOC of the second capacitor the SOC is lower than a predetermined level. As a result, it can prevent pixel unit of the electronic device from being overexposed.
Public/Granted literature
- US20200267337A1 ANTI-OVEREXPOSURE CIRCUIT STRUCTURE AND ELECTRONIC DEVICE USING THE SAME Public/Granted day:2020-08-20
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