Invention Grant
- Patent Title: Low CTE boro-aluminosilicate glass for glass carrier wafers
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Application No.: US16052185Application Date: 2018-08-01
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Publication No.: US11059738B2Publication Date: 2021-07-13
- Inventor: Pengxiang Qian , Yunfei Hou , Junming Xue , Rainer Liebald , Hiroshi Kuroki
- Applicant: SCHOTT Glass Technologies (Suzhou) Co. Ltd.
- Applicant Address: CN Suzhou
- Assignee: SCHOTT Glass Technologies (Suzhou) Co. Ltd.
- Current Assignee: SCHOTT Glass Technologies (Suzhou) Co. Ltd.
- Current Assignee Address: CN Suzhou
- Agency: Taylor IP, P.C.
- Main IPC: C03C3/091
- IPC: C03C3/091 ; C03C4/00 ; C03C27/00

Abstract:
A low CTE boro-aluminosilicate glass having a low brittleness for use in wafer-level-packaging (WLP) applications is disclosed. The glass comprises a composition in mol-% of SiO2: 60-85, Al2O3: 1-17, B2O3: 8-20, Na2O: 0-5, K2O: 0-5, MgO: 0-10, CaO: 0-10, SrO: 0-10, and BaO: 0-10. An average number of non-bridging oxygen per polyhedron (NBO) is equal to or larger than −0.2 and a ratio B2O3/Al2O3 is equal to or larger than 0.5. The NBO is defined as NBO=2×Omol/(Simol+Almol+Bmol)−4. A glass carrier wafer made from the low CTE boro-aluminosilicate glass and a use thereof as a glass carrier wafer for the processing of a silicon substrate are also disclosed, as well as a method for providing a low CTE boro-aluminosilicate glass.
Public/Granted literature
- US20180339932A1 LOW CTE BORO-ALUMINOSILICATE GLASS FOR GLASS CARRIER WAFERS Public/Granted day:2018-11-29
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