Invention Grant
- Patent Title: Ferromagnetic material sputtering target
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Application No.: US15752061Application Date: 2017-09-12
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Publication No.: US11060180B2Publication Date: 2021-07-13
- Inventor: Atsushi Sato
- Applicant: JX Nippon Mining & Metals Corporation
- Applicant Address: JP Tokyo
- Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: Nields, Lemack & Frame, LLC
- Priority: JPJP2016-178008 20160912
- International Application: PCT/JP2017/032932 WO 20170912
- International Announcement: WO2018/047978 WO 20180315
- Main IPC: C23C14/34
- IPC: C23C14/34

Abstract:
There is provided a BN-containing ferromagnetic material sputtering target which is capable of suppressing generation of particles during sputtering. A sputtering target containing from 1 to 40 at. % of B and from 1 to 30 at. % of N and comprising a structure including at least one ferromagnetic metal-containing metal phase and at least one nonmagnetic material phase, wherein an X-ray diffraction profile obtained by analyzing the structure with an X-ray diffraction method exhibits a diffraction peak derived from cubic boron nitride.
Public/Granted literature
- US20200216945A1 Ferromagnetic Material Sputtering Target Public/Granted day:2020-07-09
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