Invention Grant
- Patent Title: Substrate processing apparatus and control system
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Application No.: US16362356Application Date: 2019-03-22
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Publication No.: US11060190B2Publication Date: 2021-07-13
- Inventor: Kazuo Nakaya , Hiroki Okamiya
- Applicant: KOKUSAI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Volpe Koenig
- Priority: JPJP2018-064191 20180329,JPJP2019-011910 20190128
- Main IPC: C23C16/52
- IPC: C23C16/52 ; H01L21/66 ; H01L21/02 ; H01L21/67 ; H01L21/673 ; H01L21/677

Abstract:
A controller that processes a substrate by executing a process recipe for supplying at least a source gas to a process chamber to form a film on the substrate, and a pressure controller that controls the degree of opening of a pressure control valve on the basis of a pressure value detected by a pressure sensor that detects a pressure in a furnace during execution of the recipe and maintains the process chamber to a predetermined pressure. The pressure controller includes a memory that accumulates data acquired from the pressure sensor and pressure control valve, and measures a valve full close time to full close of the pressure control valve during execution of the process recipe and holds the valve full close time in the memory, and the controller acquires the stored valve full close time and confirms whether the acquired valve full close time falls within a threshold range.
Public/Granted literature
- US20190301020A1 SUBSTRATE PROCESSING APPARATUS, CONTROL SYSTEM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2019-10-03
Information query
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