Invention Grant
- Patent Title: Broadband wafer defect detection
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Application No.: US15901806Application Date: 2018-02-21
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Publication No.: US11060980B2Publication Date: 2021-07-13
- Inventor: Nai-Han Cheng , Hsing-Piao Hsu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Duane Morris LLP
- Main IPC: G01N21/95
- IPC: G01N21/95 ; G01N21/33 ; G01N21/88

Abstract:
In an embodiment, a system includes: a broadband light source; a wafer with a first side facing the broadband light source; a first light sensor configured to detect reflected light from the broadband light source emanating from the first side; a second light sensor configured to detect emergent light emanating from a second side of the wafer opposite the first side, wherein the emergent light originates from the broadband light source; and a detector module configured to analyze the reflected light and the emergent light to identify wafer defects.
Public/Granted literature
- US20190162676A1 BROADBAND WAFER DEFECT DETECTION Public/Granted day:2019-05-30
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