Invention Grant
- Patent Title: Guided inspection of a semiconductor wafer based on spatial density analysis
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Application No.: US15926990Application Date: 2018-03-20
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Publication No.: US11060981B2Publication Date: 2021-07-13
- Inventor: Ariel Hirszhorn , Yotam Sofer
- Applicant: Applied Materials Israel Ltd.
- Applicant Address: IL Rehovot
- Assignee: Applied Materials Israel Ltd.
- Current Assignee: Applied Materials Israel Ltd.
- Current Assignee Address: IL Rehovot
- Agency: Lowenstein Sandler LLP
- Main IPC: G01N21/95
- IPC: G01N21/95 ; G06T7/00 ; G01N21/956

Abstract:
Samples at a semiconductor wafer that have been reviewed by a review tool may be identified. Furthermore, a candidate sample at the semiconductor wafer that has not been reviewed by the review tool may be identified. A location of the candidate sample at the semiconductor wafer may and a number of the samples that have been reviewed that are at locations proximate to the location of the candidate sample may be determined. The candidate sample may be selected for review by the review tool based on the number of the plurality of samples that are at locations proximate to the location of the candidate sample.
Public/Granted literature
- US20190293569A1 GUIDED INSPECTION OF A SEMICONDUCTOR WAFER BASED ON SPATIAL DENSITY ANALYSIS Public/Granted day:2019-09-26
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