Invention Grant
- Patent Title: Storage device selectively generating parity bits according to endurance of memory cell, and method thereof
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Application No.: US16851434Application Date: 2020-04-17
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Publication No.: US11061769B2Publication Date: 2021-07-13
- Inventor: Jae-Duk Yu , Jin-Young Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, PC
- Priority: KR10-2019-0115842 20190920
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10 ; G11C29/52 ; G11C16/34 ; G11C13/00 ; G11C16/04

Abstract:
A storage device includes a first nonvolatile memory chip; a second nonvolatile memory chip; and a controller. The controller may include a processor configured to execute a flash translation layer (FTL) loaded onto an on-chip memory; an ECC engine configured to generate first parity bits for data and to selectively generate second parity bits for the data, under control of the processor; and a nonvolatile memory interface circuit configured to transmit the data and the first parity bits to the first nonvolatile memory chip, and to selectively transmit the second parity bits selectively generated to the second nonvolatile memory chip.
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