Invention Grant
- Patent Title: Memory device performing ZQ calibration, memory system, and operation method of memory device
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Application No.: US16262250Application Date: 2019-01-30
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Publication No.: US11062744B2Publication Date: 2021-07-13
- Inventor: Donghun Lee , Daesik Moon , Young-Soo Sohn , Young-Hoon Son , Ki-Seok Oh , Changkyo Lee , Hyun-Yoon Cho , Kyung-Soo Ha , Seokhun Hyun
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2018-0059450 20180525
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G06F3/06

Abstract:
A memory device includes a driver that drives a data line connected with an external device, an internal ZQ manager that generates an internal ZQ start signal, a selector that selects one of the internal ZQ start signal and a ZQ start command from the external device, based on a ZQ mode, a ZQ calibration engine that generates a ZQ code by performing ZQ calibration in response to a selection result of the selector, and a ZQ code register that loads the ZQ code onto the driver in response to a ZQ calibration command from the external device.
Public/Granted literature
- US2705774A Electrical integrating meters and indicating instruments Public/Granted day:1955-04-05
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