Invention Grant
- Patent Title: Heterostructure system and method of fabricating the same
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Application No.: US16325410Application Date: 2017-08-16
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Publication No.: US11062902B2Publication Date: 2021-07-13
- Inventor: Yoram Dagan , Gil Markovich , Alon Ron , Amir Hevroni
- Applicant: Ramot at Tel-Aviv University Ltd.
- Applicant Address: IL Tel-Aviv
- Assignee: Ramot at Tel-Aviv University Ltd.
- Current Assignee: Ramot at Tel-Aviv University Ltd.
- Current Assignee Address: IL Tel-Aviv
- International Application: PCT/IL2017/050907 WO 20170816
- International Announcement: WO2018/033916 WO 20180222
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L31/18
Abstract:
A method of fabricating a heterostructure system, comprises epitaxially growing a crystalline layer of a first substance on a crystalline base layer by surface catalysis in a solution, wherein the growth is self-terminated once a monolayer of the substance is formed on the base layer.
Public/Granted literature
- US20190273012A1 HETEROSTRUCTURE SYSTEM AND METHOD OF FABRICATING THE SAME Public/Granted day:2019-09-05
Information query
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