Invention Grant
- Patent Title: Semiconductor device and method of manufacture
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Application No.: US16185749Application Date: 2018-11-09
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Publication No.: US11063007B2Publication Date: 2021-07-13
- Inventor: Po-Yao Chuang , Po-Hao Tsai , Shin-Puu Jeng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L23/66 ; H01L23/498 ; H01L23/367 ; H01L25/065 ; H01L21/56 ; H01Q1/22
Abstract:
A semiconductor device and manufacturing process are provided wherein a first semiconductor device is electrically connected to redistribution structures. An antenna structure is located on an opposite side of the first semiconductor device from the redistribution structures, and electrical connections separate from the first semiconductor device connect the antenna structure to the redistribution structures.
Public/Granted literature
- US20190355680A1 Semiconductor Device and Method of Manufacture Public/Granted day:2019-11-21
Information query
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