Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16687055Application Date: 2019-11-18
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Publication No.: US11063149B2Publication Date: 2021-07-13
- Inventor: Fang-Liang Lu , I-Hsieh Wong , Shih-Ya Lin , Cheewee Liu , Samuel C. Pan
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. , National Taiwan University
- Applicant Address: TW Hsinchu; TW Taipei
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,National Taiwan University
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,National Taiwan University
- Current Assignee Address: TW Hsinchu; TW Taipei
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10 ; H01L21/02 ; H01L29/08 ; H01L29/161 ; H01L29/165 ; H01L29/06 ; H01L21/28 ; H01L29/66 ; H01L21/268 ; H01L21/324
Abstract:
A semiconductor device includes a first layer of a first semiconductor material disposed on a semiconductor substrate and a second layer of a second semiconductor material disposed on the first layer. The second semiconductor material is formed of an alloy that includes a first element and a second element. The first semiconductor material and the second semiconductor material are different. A gate structure is disposed on a first portion of the second layer. A surface region of a second portion of the second layer not covered by the gate structure has a higher concentration of the second element than an internal region of the second portion of the second layer, and the surface region surrounds the internal region.
Public/Granted literature
- US20200098917A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2020-03-26
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