A light-emitting diode includes: a light emitting epitaxial structure including a first-type semiconductor layer, an active layer and a second-type semiconductor layer, and having a first surface as a light emitting surface, and an opposing second surface; a conducting layer formed over the second surface and including a physical plating layer and a chemical plating layer, wherein the physical plating layer is adjacent to the light emitting epitaxial structure and has cracks, and the chemical plating layer fills the cracks in the physical plating layer; and a submount coupled to the light emitting epitaxial laminated layer through the conducting layer.