Invention Grant
- Patent Title: Driving circuit for power transistor
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Application No.: US16366305Application Date: 2019-03-27
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Publication No.: US11063423B2Publication Date: 2021-07-13
- Inventor: Naoki Matsumoto
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Cantor Colburn LLP
- Priority: JPJP2018-065333 20180329
- Main IPC: H02H7/00
- IPC: H02H7/00 ; H02H7/122 ; H02H1/00

Abstract:
A low-side driving circuit forms a power conversion apparatus together with a power transistor to be driven. A protection circuit generates a protection signal S1. An alarm control circuit changes an electrical state of a fail terminal according to the protection signal S1. A judgment circuit compares a voltage VFO at a fail (FO) terminal with a predetermined threshold value, and generates a judgment signal S2 that indicates the comparison result. A control logic circuit controls the state of the power transistor based on the judgment signal S2 and the protection signal S1.
Public/Granted literature
- US20190305545A1 DRIVING CIRCUIT FOR POWER TRANSISTOR Public/Granted day:2019-10-03
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