Invention Grant
- Patent Title: Low leakage MOSFET supply clamp for electrostatic discharge (ESD) protection
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Application No.: US15951806Application Date: 2018-04-12
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Publication No.: US11063429B2Publication Date: 2021-07-13
- Inventor: Radhakrishnan Sithanandam , Divya Agarwal , Ghislain Troussier , Jean Jimenez , Malathi Kar
- Applicant: STMicroelectronics International N.V. , STMicroelectronics SA
- Applicant Address: NL Schiphol; FR Montrouge
- Assignee: STMicroelectronics International N.V.,STMicroelectronics SA
- Current Assignee: STMicroelectronics International N.V.,STMicroelectronics SA
- Current Assignee Address: NL Schiphol; FR Montrouge
- Agency: Crowe & Dunlevy
- Main IPC: H02H9/04
- IPC: H02H9/04 ; H01L27/02
Abstract:
Electrostatic discharge (ESD) protection is provided in using a supply clamp circuit using an ESD event actuated MOSFET device. Triggering of the MOSFET device is made at both the gate terminal and the substrate (back gate) terminal. Additionally, the MOSFET device can be formed of cascoded MOSFETs.
Public/Granted literature
- US20190319453A1 LOW LEAKAGE MOSFET SUPPLY CLAMP FOR ELECTROSTATIC DISCHARGE (ESD) PROTECTION Public/Granted day:2019-10-17
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