Invention Grant
- Patent Title: Selective atomic layer deposition of ruthenium
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Application No.: US16220794Application Date: 2018-12-14
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Publication No.: US11066743B2Publication Date: 2021-07-20
- Inventor: Yihong Chen , Yong Wu , Srinivas Gandikota , Abhijit Basu Mallick
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: C23C16/18
- IPC: C23C16/18 ; C23C16/455 ; C23C16/04 ; C23C14/00 ; C23C16/458 ; C23C16/02 ; H01B1/06 ; C07F15/00
Abstract:
Methods of selectively depositing ruthenium are described. The preferred deposition surface changes based on the substrate temperature during processing. At high temperatures, ruthenium is deposited on a first surface of a conductive material over a second surface of an insulating material. At lower temperatures, ruthenium is deposited on an insulating surface over a conducting surface.
Public/Granted literature
- US20190185993A1 Selective Atomic Layer Deposition Of Ruthenium Public/Granted day:2019-06-20
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