Invention Grant
- Patent Title: Three-dimensional semiconductor memory device
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Application No.: US16398442Application Date: 2019-04-30
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Publication No.: US11069698B2Publication Date: 2021-07-20
- Inventor: Junhyoung Kim , Kwang-Soo Kim , Geunwon Lim , Jisung Cheon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2018-0098149 20180822
- Main IPC: H01L27/11565
- IPC: H01L27/11565 ; H01L27/11582 ; H01L27/11573 ; H01L21/311

Abstract:
A three-dimensional semiconductor memory device may include a first stack block including first stacks arranged in a first direction on a substrate, a second stack block including second stacks arranged in the first direction on the substrate, and a separation structure provided on the substrate between the first stack block and the second stack block. The separation structure may include first mold layers and second mold layers, which are stacked in a vertical direction perpendicular to a top surface of the substrate.
Public/Granted literature
- US20200066742A1 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2020-02-27
Information query
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