Invention Grant
- Patent Title: Display substrate and method of preparing the same, and display device
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Application No.: US16399508Application Date: 2019-04-30
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Publication No.: US11069725B2Publication Date: 2021-07-20
- Inventor: Jun Liu , Luke Ding , Ning Liu , Wei Li , Bin Zhou , Liangchen Yan
- Applicant: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. , BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Hefei; CN Beijing
- Assignee: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Hefei; CN Beijing
- Agency: Kinney & Lange, P.A.
- Priority: CN201811098275.8 20180920
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/311 ; H01L21/3213

Abstract:
A display substrate and a method of preparing the same, and a display device are provided, the method including: providing a substrate; forming a switching thin film transistor precursor and a driving thin film transistor precursor on the substrate, each including a semiconductor layer, a gate insulating material layer and a gate metallic layer stacked sequentially above the substrate; forming a photoresist layer above the switching thin film transistor precursor and the driving thin film transistor precursor, and forming an etching mask from the photoresist layer, a first portion of the etching mask at the switching thin film transistor precursor and a second portion of the etching mask at the driving thin film transistor precursor having different shapes; and forming a switching thin film transistor and a driving thin film transistor, by etching processing the switching thin film transistor precursor and the driving thin film transistor precursor with the etching mask.
Public/Granted literature
- US20200098797A1 DISPLAY SUBSTRATE AND METHOD OF PREPARING THE SAME, AND DISPLAY DEVICE Public/Granted day:2020-03-26
Information query
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