Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
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Application No.: US15413711Application Date: 2017-01-24
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Publication No.: US11069732B2Publication Date: 2021-07-20
- Inventor: Nobutaka Ukigaya
- Applicant: CANON KABUSHIKI KAISHA
- Applicant Address: JP Tokyo
- Assignee: CANON KABUSHIKI KAISHA
- Current Assignee: CANON KABUSHIKI KAISHA
- Current Assignee Address: JP Tokyo
- Agency: Canon U.S.A., Inc., IP Division
- Priority: JPJP2016-012868 20160126
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A semiconductor device includes a semiconductor layer having a front surface on which a transistor is provided and a back surface opposite to the front surface, and a conductive member that penetrates through the semiconductor layer. In the semiconductor device, between a second plane including the back surface and a third plane, a solid material that is an insulator is provided between the conductive member and the semiconductor layer, and, between a first plane including the front surface and the third plane, a hollow part is provided between the conductive member and the semiconductor layer, and a center of the hollow part in a direction crossing the first plane and the second plane is positioned between the first plane and the third plane.
Public/Granted literature
- US20170213860A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2017-07-27
Information query
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