Invention Grant
- Patent Title: Electric field controllable spin filter tunnel junction magnetoresistive memory devices and methods of making the same
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Application No.: US16686860Application Date: 2019-11-18
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Publication No.: US11069741B2Publication Date: 2021-07-20
- Inventor: Bhagwati Prasad , Alan Kalitsov
- Applicant: Western Digital Technologies, Inc.
- Applicant Address: US CA San Jose
- Assignee: Western Digital Technologies, Inc.
- Current Assignee: Western Digital Technologies, Inc.
- Current Assignee Address: US CA San Jose
- Agency: The Marbury Law Group PLLC
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L27/22 ; G11C11/16 ; H01L43/10
Abstract:
A magnetoresistive memory device includes a first electrode, a second electrode, and a layer stack containing an electric field-modulated magnetic transition layer and a ferroelectric insulator layer located between the first electrode and the second electrode, The electric field-modulated magnetic transition layer includes a non-metallic magnetic material having a ferromagnetic state and a non-ferromagnetic state with a state transition therebetween that depends on an external electric field.
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