A silicon carbide semiconductor device includes a first semiconductor layer of silicon carbide, a device structure provided on top of the first semiconductor layer, a second semiconductor layer of silicon carbide having a higher impurity concentration than the first semiconductor layer, provided under the first semiconductor layer, the second semiconductor layer implementing an ohmic-contact, and a metallic electrode film provided under the second semiconductor layer. A thickness of a carbon-containing region in which carbon-atoms are precipitated between the second semiconductor layer and the metallic electrode film is 10 nm or less.