Invention Grant
- Patent Title: Field effect transistor including gradually varying composition channel
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Application No.: US16703128Application Date: 2019-12-04
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Publication No.: US11069802B2Publication Date: 2021-07-20
- Inventor: Injun Hwang , Jongseob Kim , Joonyong Kim , Younghwan Park , Junhyuk Park , Dongchul Shin , Jaejoon Oh , Soogine Chong , Sunkyu Hwang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2019-0068262 20190610
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/20 ; H01L29/205 ; H01L29/08 ; H01L29/10 ; H01L29/40
Abstract:
Provided is a field effect transistor (FET) including a gradually varying composition channel. The FET includes: a drain region; a drift region on the drain region; a channel region on the drift region; a source region on the channel region; a gate penetrating the channel region and the source region in a vertical direction; and a gate oxide surrounding the gate. The channel region has a gradually varying composition along the vertical direction such that an intensity of a polarization in the channel region gradually varies.
Information query
IPC分类:
