Invention Grant
- Patent Title: Transistor having vertical structure and electric device
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Application No.: US16575077Application Date: 2019-09-18
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Publication No.: US11069814B2Publication Date: 2021-07-20
- Inventor: SangYun Sung , SeHee Park , Jiyong Noh , InTak Cho , PilSang Yun
- Applicant: LG DISPLAY CO., LTD.
- Applicant Address: KR Seoul
- Assignee: LG DISPLAY CO., LTD.
- Current Assignee: LG DISPLAY CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2018-0141298 20181116
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L29/423 ; H01L29/49

Abstract:
An electronic device can include a panel; a driver circuit configured to drive the panel; and a transistor disposed in the panel, the transistor including: a gate electrode disposed on a substrate, a first insulating film disposed on the gate electrode, an active layer disposed on the first insulating film, the active layer including: a first portion of the active layer overlapping with an upper surface of the gate electrode, a second portion of the active layer extending from the first portion, being disposed along a side surface of the gate electrode and including a channel area, and a third portion of the active layer extending from the second portion of the active layer, the third portion of the active layer being disposed on a portion of the first insulating film that does not overlap with the gate electrode, a second insulating film disposed on the active layer, a first electrode disposed on the second insulating film, the first electrode being electrically connected to the first portion of the active layer, and a second electrode disposed on the second insulating film, the second electrode being electrically connected to the third portion of the active layer.
Public/Granted literature
- US20200161476A1 TRANSISTOR HAVING VERTICAL STRUCTURE AND ELECTRIC DEVICE Public/Granted day:2020-05-21
Information query
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