A method for manufacturing a crystalline silicon-based solar cell includes performing a plasma treatment on a plurality of conductive single-crystalline silicon substrates in a chemical vapor deposition (CVD) chamber, each of the conductive single-crystalline silicon substrates having an intrinsic silicon-based layer on a first principal surface thereof. The first principal surface of the conductive single-crystalline silicon substrate may have a pyramidal texture that comprises a plurality of projections having a top portion, a middle portion, and a valley portion. The plasma treatment may include introducing a hydrogen gas and a silicon-containing gas into the CVD chamber and exposing a surface of the intrinsic silicon-based layer to hydrogen plasma. An amount of the hydrogen gas introduced into the CVD chamber during the plasma treatment may be 150 to 2500 times an amount of the silicon-containing gas introduced into the CVD chamber.