Invention Grant
- Patent Title: Short-circuit protection circuit for self-arc-extinguishing type semiconductor element
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Application No.: US15505812Application Date: 2014-09-11
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Publication No.: US11070046B2Publication Date: 2021-07-20
- Inventor: Yoshitaka Naka , Yasushi Nakayama , Yoshiko Tamada , Hiroyuki Takagi , Junichiro Ishikawa , Kazuhiro Otsu , Naohiko Mitomi
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Chiyoda-ku
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Chiyoda-ku
- Agency: Xsensus LLP
- International Application: PCT/JP2014/074054 WO 20140911
- International Announcement: WO2016/038717 WO 20160317
- Main IPC: H02H3/00
- IPC: H02H3/00 ; H02H3/08 ; H02M7/5387 ; H03K17/082 ; H01L27/02 ; H01L29/739

Abstract:
A short-circuit protection circuit for a self-arc-extinguishing type semiconductor element includes a first protection circuit and a second protection circuit. The first protection circuit is configured to reduce a voltage between a control electrode and a first main electrode of the self-arc-extinguishing type semiconductor element when detecting overcurrent flowing between the first main electrode and a second main electrode. The second protection circuit is configured to: detect current flowing in an interconnection adapted to supply the drive voltage; determine, based on the detected current, whether the first protection circuit is in an operating state; and change the drive voltage to turn off the self-arc-extinguishing type semiconductor element when the first protection circuit is in the operating state.
Public/Granted literature
- US20170288385A1 SHORT-CIRCUIT PROTECTION CIRCUIT FOR SELF-ARC-EXTINGUISHING TYPE SEMICONDUCTOR ELEMENT Public/Granted day:2017-10-05
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