Invention Grant
- Patent Title: Cell voltage accumulation discharge
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Application No.: US16825832Application Date: 2020-03-20
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Publication No.: US11074955B2Publication Date: 2021-07-27
- Inventor: Adam S. El-Mansouri , David L. Pinney
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G11C11/22
- IPC: G11C11/22 ; G11C8/10 ; G11C8/08

Abstract:
Methods, systems, and devices for cell voltage accumulation discharge are described. One or more sections of a bank of ferroelectric memory cells may be coupled with one or more access lines. By activating one or more switching components, one or more sections (that may include a memory array and/or a driver) of memory cells may be isolated. When isolated, a voltage may be applied across an access line associated with the section to activate an access device of each memory cell. By activating a switching component of a respective memory cell, a capacitor of the memory cell may be discharged and then the isolated section may be coupled with the plurality of access lines.
Public/Granted literature
- US20200219551A1 CELL VOLTAGE ACCUMULATION DISCHARGE Public/Granted day:2020-07-09
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