Invention Grant
- Patent Title: Substrate processing apparatus
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Application No.: US14648247Application Date: 2013-12-26
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Publication No.: US11075060B2Publication Date: 2021-07-27
- Inventor: Eun Geu Ha , Sung Kook Kim , Hyun O Kim , Il Young Park
- Applicant: MOOHAN Co., Ltd.
- Applicant Address: KR Gwangju-si
- Assignee: MOOHAN Co., Ltd.
- Current Assignee: MOOHAN Co., Ltd.
- Current Assignee Address: KR Gwangju-si
- Agency: Central California IP Group, P.C.
- Agent Andrew D. Fortney
- Priority: KR10-2012-0154918 20121227
- International Application: PCT/KR2013/012194 WO 20131226
- International Announcement: WO2014/104751 WO 20140703
- Main IPC: H01J37/32
- IPC: H01J37/32 ; C23C16/509 ; C23C16/452 ; C23C16/455 ; C23C16/50

Abstract:
Disclosed is an apparatus for processing substrate which prevents a plasma discharge from being transferred to a substrate so as to minimize damages on the substrate and also minimize deterioration in quality of a thin film deposited on the substrate, wherein the apparatus may include a process chamber for providing a reaction space, and a gas distribution module for dissociating processing gas by the use of plasma, and distributing the dissociated processing gas onto a substrate, wherein the gas distribution module may include a lower frame having a plurality of electrode inserting portions, an upper frame having a plurality of protruding electrodes and processing gas distribution holes, and an insulating plate having a plurality of electrode penetrating portions.
Public/Granted literature
- US20150303037A1 Substrate Processing Apparatus Public/Granted day:2015-10-22
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