Invention Grant
- Patent Title: Method for depositing a silicon nitride film and film deposition apparatus
-
Application No.: US16057125Application Date: 2018-08-07
-
Publication No.: US11075074B2Publication Date: 2021-07-27
- Inventor: Hitoshi Kato , Yutaka Takahashi , Kazumi Kubo
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JPJP2017-154742 20170809
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/34 ; C23C16/455 ; C23C16/458 ; H01L21/687 ; H01J37/32 ; H01L21/768 ; C23C16/04 ; C23C16/452
Abstract:
A method for depositing a silicon nitride film is provided to fill a recessed pattern formed in a surface of a substrate with a silicon nitride film. In the method, a first silicon nitride film is deposited in the recessed pattern formed in the surface of the substrate. The first silicon nitride film has a V-shaped cross section decreasing its film thickness upward from a bottom portion of the recessed pattern. A second silicon nitride film conformal to a surface shape of the first silicon nitride film is deposited.
Public/Granted literature
- US20190051512A1 METHOD FOR DEPOSITING A SILICON NITRIDE FILM AND FILM DEPOSITION APPARATUS Public/Granted day:2019-02-14
Information query
IPC分类:
