Invention Grant
- Patent Title: Substrate processing apparatus
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Application No.: US16675551Application Date: 2019-11-06
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Publication No.: US11075096B2Publication Date: 2021-07-27
- Inventor: Takao Inada , Hironobu Hyakutake , Hisashi Kawano
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Abelman, Frayne & Schwab
- Priority: JPJP2018-211537 20181109
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/677 ; H01L21/311
Abstract:
A substrate processing method includes etching a substrate on which a silicon oxide film and a silicon nitride film are formed with a phosphoric acid processing liquid. In the etching, a silicon concentration in the phosphoric acid processing liquid is a first silicon concentration at which the silicon oxide film is etched, from a start time until a first time interval has elapsed.
Public/Granted literature
- US20200152489A1 SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND STORAGE MEDIUM Public/Granted day:2020-05-14
Information query
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