Invention Grant
- Patent Title: Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability
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Application No.: US16508606Application Date: 2019-07-11
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Publication No.: US11075109B2Publication Date: 2021-07-27
- Inventor: Michael R. Seacrist , Robert W. Standley , Jeffrey L. Libbert , Hariprasad Sreedharamurthy , Leif Jensen
- Applicant: GlobalWafers Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: GlobalWafers Co., Ltd.
- Current Assignee: GlobalWafers Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Armstrong Teasdale LLP
- Main IPC: H01L21/762
- IPC: H01L21/762 ; C30B29/06 ; H01L21/322 ; H01L23/66 ; H01L27/12 ; H01L29/06
Abstract:
A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
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