Invention Grant
- Patent Title: FinFET device and method
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Application No.: US16542578Application Date: 2019-08-16
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Publication No.: US11075120B2Publication Date: 2021-07-27
- Inventor: Kun-Mu Li , Heng-Wen Ting , Hsueh-Chang Sung , Yen-Ru Lee , Chien-Wei Lee
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L21/8234 ; H01L21/308 ; H01L27/088 ; H01L29/78 ; H01L21/3065

Abstract:
A device includes a fin over a substrate, the fin including a first end and a second end, wherein the first end of the fin has a convex profile, an isolation region adjacent the fin, a gate structure along sidewalls of the fin and over the top surface of the fin, a gate spacer laterally adjacent the gate structure, and an epitaxial region adjacent the first end of the fin.
Public/Granted literature
- US20210050267A1 FinFET Device and Method Public/Granted day:2021-02-18
Information query
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