Invention Grant
- Patent Title: Semiconductor device with a portion including silicon and nitrogen and method of manufacturing
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Application No.: US16556642Application Date: 2019-08-30
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Publication No.: US11075134B2Publication Date: 2021-07-27
- Inventor: Markus Kahn , Oliver Humbel , Philipp Sebastian Koch , Angelika Koprowski , Christian Maier , Gerhard Schmidt , Juergen Steinbrenner
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102018121897.4 20180907
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/29 ; C23C16/34 ; H01L23/00 ; H01L21/02 ; H01L29/06
Abstract:
A semiconductor device includes a semiconductor body and a first portion including silicon and nitrogen. The first portion is in direct contact with the semiconductor body. A second portion including silicon and nitrogen is in direct contact with the first portion. The first portion is between the semiconductor body and the second portion. An average silicon content in the first portion is higher than in the second portion.
Public/Granted literature
- US20200083133A1 Semiconductor Device with a Portion Including Silicon and Nitrogen and Method of Manufacturing Public/Granted day:2020-03-12
Information query
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