Invention Grant
- Patent Title: High power module package structures
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Application No.: US16243505Application Date: 2019-01-09
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Publication No.: US11075137B2Publication Date: 2021-07-27
- Inventor: Yusheng Lin , Jerome Teysseyre
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Brake Hughes Bellermann LLP
- Main IPC: H01L23/373
- IPC: H01L23/373 ; H01L23/31 ; H01L25/07 ; H01L23/433 ; H01L21/52 ; H01L29/739 ; H01L23/498 ; H01L23/00 ; H01L25/00 ; H01L25/065 ; H01L29/861

Abstract:
A dual-side cooling package includes a first semiconductor die and a second semiconductor die disposed between a first direct bonded metal (DBM) substrate and a second DBM substrate. A metal surface of the first DBM substrate defines a first outer surface of a package and a metal surface of the second DBM substrate defines a second outer surface of the package. The first semiconductor die is thermally coupled to the first DBM substrate. A first conductive spacer thermally couples the first semiconductor die to the second DBM substrate. The second semiconductor die is thermally coupled to a second conductive spacer. Further, one of the second semiconductor die and the second conductive spacer is thermally coupled to the first DMB substrate and the other of the second semiconductor die and the second conductive spacer is thermally coupled to the second DBM substrate.
Public/Granted literature
- US20190341332A1 HIGH POWER MODULE PACKAGE STRUCTURES Public/Granted day:2019-11-07
Information query
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