Invention Grant
- Patent Title: InFO-POP structures with TIVs having cavities
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Application No.: US16590908Application Date: 2019-10-02
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Publication No.: US11075168B2Publication Date: 2021-07-27
- Inventor: Jing-Cheng Lin , Chen-Hua Yu , Po-Hao Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L21/56 ; H01L21/683 ; H01L23/538 ; H01L23/31 ; H01L23/00 ; H01L25/10 ; H01L25/00 ; H01L25/065
Abstract:
A method includes dispensing sacrificial region over a carrier, and forming a metal post over the carrier. The metal post overlaps at least a portion of the sacrificial region. The method further includes encapsulating the metal post and the sacrificial region in an encapsulating material, demounting the metal post, the sacrificial region, and the encapsulating material from the carrier, and removing at least a portion of the sacrificial region to form a recess extending from a surface level of the encapsulating material into the encapsulating material.
Public/Granted literature
- US20200035608A1 InFO-POP structures with TIVs Having Cavities Public/Granted day:2020-01-30
Information query
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