Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the semiconductor device
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Application No.: US16493338Application Date: 2017-08-04
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Publication No.: US11075180B2Publication Date: 2021-07-27
- Inventor: Katsuhiro Takao
- Applicant: AOI Electronics Co., Ltd.
- Applicant Address: JP Takamatsu
- Assignee: AOI Electronics Co., Ltd.
- Current Assignee: AOI Electronics Co., Ltd.
- Current Assignee Address: JP Takamatsu
- Agency: Crowell & Moring LLP
- Priority: JPJP2017-106608 20170530
- International Application: PCT/JP2017/028390 WO 20170804
- International Announcement: WO2018/220868 WO 20181206
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/00 ; H01L21/56 ; H01L21/78 ; H01L23/31
Abstract:
A semiconductor device includes a semiconductor element having a plated portion on a part of a main surface and a protective member that seals surfaces of the semiconductor element except for the main surface, wherein the plated portion is electrically connected to a circuit in the semiconductor element.
Public/Granted literature
- US20210143113A1 Semiconductor Device and Method of Manufacturing the Semiconductor Device Public/Granted day:2021-05-13
Information query
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