Invention Grant
- Patent Title: Semiconductor package and method of forming the same
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Application No.: US16142173Application Date: 2018-09-26
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Publication No.: US11075182B2Publication Date: 2021-07-27
- Inventor: Hsien-Wei Chen , An-Jhih Su
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Jones Day
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; H01L21/56 ; H01L25/10 ; H01L23/498 ; H01L25/18 ; H01L25/065

Abstract:
A method of forming a semiconductor package includes receiving a carrier, coating the carrier with a bonding layer, forming a first insulator layer over the bonding layer, forming a backside redistribution layer over the first insulator layer, forming a second insulator layer over the backside redistribution layer, patterning the second insulator layer to form a recess that extends through the second insulator layer and to the backside redistribution layer, filling the recess with a solder, and coupling a surface-mount device (SMD) to the solder.
Public/Granted literature
- US20190027456A1 Semiconductor Package and Method of Forming the Same Public/Granted day:2019-01-24
Information query
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