According to one embodiment, semiconductor memory device includes a first conductive layer, a plurality of second conductive layers stacked over the first conductive layer in a first direction, a memory pillar extending in the plurality of second conductive layers in the first direction, and a first layer extending from the first conductive layer through a portion of the plurality of second conductive layers in the first direction in contact with a the plurality of second conductive layers, the first layer including a first portion having a first cross section in the plane of second and third directions that are perpendicular to each other and to the first direction, and a second portion having a second cross section, different from the first cross section, in the plane of the second and third directions.